Discrete Semiconductor Products

STPSC20H065CT

Obsolete

STMicroelectronics

SIC SCHOTTKY DIODES 650 V, 20 A DUAL HIGH SURGE SILICON CARBIDE POWER SCHOTTKY DIODE

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DocumentsSTPSC20H065CT | Datasheet

Discrete Semiconductor Products

STPSC20H065CT

Obsolete

STMicroelectronics

SIC SCHOTTKY DIODES 650 V, 20 A DUAL HIGH SURGE SILICON CARBIDE POWER SCHOTTKY DIODE

Deep-Dive with AI

DocumentsSTPSC20H065CT | Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STPSC20H065CT

Current - Average Rectified (Io) (per Diode)	10 A
Current - Reverse Leakage @ Vr	100 µA
Diode Configuration	1 Pair Common Cathode
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-220-3
Qualification	AEC-Q101
Speed	500 ns, 200 mA
Supplier Device Package	TO-220
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.75 V

STPSC20H065C Series

650 V, 20 A dual High Surge Silicon Carbide Power Schottky Diode

Part	Package / Case	Technology	Diode Configuration	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Qualification	Grade	Mounting Type	Speed	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io) (per Diode)	Reverse Recovery Time (trr)
STMicroelectronics STPSC20H065CT	TO-220-3	SiC (Silicon Carbide) Schottky	1 Pair Common Cathode	-40 °C	175 ░C	100 µA	TO-220	650 V	AEC-Q101	Automotive	Through Hole	200 mA 500 ns	1.75 V	10 A
STMicroelectronics STPSC20H065CW	TO-247-3	SiC (Silicon Carbide) Schottky	1 Pair Common Cathode	-40 °C	175 ░C	100 µA	TO-247	650 V			Through Hole	500 mA	1.75 V	10 A	0 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00
Mouser	N/A	1	$ 6.49
		10	$ 5.45
		100	$ 4.41
		250	$ 4.17
		500	$ 3.93
		1000	$ 3.33
		2000	$ 3.15

Description

General part information

STPSC20H065C Series

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

Documents

Technical documentation and resources

STPSC20H065CT | Datasheet

Datasheet