Discrete Semiconductor Products

SI2304DDS-T1-GE3

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MOSFET N-CH 30V 3.3A/3.6A SOT23

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Discrete Semiconductor Products

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MOSFET N-CH 30V 3.3A/3.6A SOT23

Technical Specifications

Parameters and characteristics for this part

Specification	SI2304DDS-T1-GE3

Current - Continuous Drain (Id) @ 25°C	3.3 A, 3.6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.7 nC
Input Capacitance (Ciss) (Max) @ Vds	235 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.7 W, 1.1 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	FET Type	Package / Case	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id [Max]	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)
Vishay General Semiconductor - Diodes Division SI2304DDS-T1-GE3	N-Channel	SC-59 SOT-23-3 TO-236-3	1.1 W 1.7 W	6.7 nC	3.3 A 3.6 A	60 mOhm	Surface Mount	4.5 V 10 V	235 pF	2.2 V	SOT-23-3 (TO-236)	MOSFET (Metal Oxide)	-55 °C	150 °C	30 V	20 V
Vishay General Semiconductor - Diodes Division SI2304DDS-T1-BE3	N-Channel	SC-59 SOT-23-3 TO-236-3	1.1 W 1.7 W	6.7 nC	3.3 A 3.6 A	60 mOhm	Surface Mount	4.5 V 10 V	235 pF	2.2 V	SOT-23-3 (TO-236)	MOSFET (Metal Oxide)	-55 °C	150 °C	30 V	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 3.3A (Ta), 3.6A (Tc) 1.1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources