SI2304 Series

Catalog

MOSFET N-CH 30V 3.3A/3.6A SOT23

Part	FET Type	Package / Case	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id [Max]	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)
Vishay General Semiconductor - Diodes Division SI2304DDS-T1-GE3	N-Channel	SC-59 SOT-23-3 TO-236-3	1.1 W 1.7 W	6.7 nC	3.3 A 3.6 A	60 mOhm	Surface Mount	4.5 V 10 V	235 pF	2.2 V	SOT-23-3 (TO-236)	MOSFET (Metal Oxide)	-55 °C	150 °C	30 V	20 V
Vishay General Semiconductor - Diodes Division SI2304DDS-T1-BE3	N-Channel	SC-59 SOT-23-3 TO-236-3	1.1 W 1.7 W	6.7 nC	3.3 A 3.6 A	60 mOhm	Surface Mount	4.5 V 10 V	235 pF	2.2 V	SOT-23-3 (TO-236)	MOSFET (Metal Oxide)	-55 °C	150 °C	30 V	20 V