Integrated Circuits (ICs)

IRS2001PBF-INF

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BUFFER/INVERTER BASED PERIPHERAL

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Integrated Circuits (ICs)

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BUFFER/INVERTER BASED PERIPHERAL

Technical Specifications

Parameters and characteristics for this part

Specification	IRS2001PBF-INF

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	600 mA
Current - Peak Output (Source, Sink) [custom]	290 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	200 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.5 V, 0.8 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 C
Package / Case	8-DIP (0.300", 7.62mm)
Rise / Fall Time (Typ) [custom]	70 ns
Rise / Fall Time (Typ) [custom]	35 ns
Supplier Device Package	8-DIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

Part	Gate Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Mounting Type	Input Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	High Side Voltage - Max (Bootstrap) [Max]	Logic Voltage - VIL, VIH	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Number of Drivers	Driven Configuration	Channel Type	Package / Case	Package / Case
INFINEON IRS2001PBF-INF	IGBT MOSFET (N-Channel) N-Channel MOSFET	20 V	10 VDC	Through Hole	Non-Inverting	8-DIP (0.300" 7.62mm)	-40 C	125 °C	8-DIP	200 V	0.8 V 2.5 V	70 ns	35 ns	600 mA	290 mA	2	Half-Bridge	Independent
INFINEON IRS2001PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	20 V	10 VDC	Through Hole	Non-Inverting	8-DIP (0.300" 7.62mm)	-40 °C	150 °C	8-PDIP	200 V	0.8 V 2.5 V	70 ns	35 ns	600 mA	290 mA	2	Half-Bridge	Independent
INFINEON IRS2001STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	20 V	10 VDC	Surface Mount	Non-Inverting	8-SOIC	-40 °C	150 °C	8-SOIC	200 V	0.8 V 2.5 V	70 ns	35 ns	600 mA	290 mA	2	Half-Bridge	Independent	0.154 in	3.9 mm
INFINEON IRS2001PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	20 V	10 VDC	Through Hole	Non-Inverting	8-DIP (0.300" 7.62mm)	-40 °C	150 °C	8-PDIP	200 V	0.8 V 2.5 V	70 ns	35 ns	600 mA	290 mA	2	Half-Bridge	Independent
INFINEON IRS2001SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	20 V	10 VDC	Surface Mount	Non-Inverting	8-SOIC	-40 °C	150 °C	8-SOIC	200 V	0.8 V 2.5 V	70 ns	35 ns	600 mA	290 mA	2	Half-Bridge	Independent	0.154 in	3.9 mm

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General part information

Half-Bridge Gate Driver IC Non-Inverting 8-DIP

Technical documentation and resources

No documents available