IRS2001 Series

Manufacturer: INFINEON

Catalog

BUFFER/INVERTER BASED PERIPHERAL

Part	Gate Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Mounting Type	Input Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	High Side Voltage - Max (Bootstrap) [Max]	Logic Voltage - VIL, VIH	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Number of Drivers	Driven Configuration	Channel Type	Package / Case	Package / Case
INFINEON IRS2001PBF-INF	IGBT MOSFET (N-Channel) N-Channel MOSFET	20 V	10 VDC	Through Hole	Non-Inverting	8-DIP (0.300" 7.62mm)	-40 C	125 °C	8-DIP	200 V	0.8 V 2.5 V	70 ns	35 ns	600 mA	290 mA	2	Half-Bridge	Independent
INFINEON IRS2001PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	20 V	10 VDC	Through Hole	Non-Inverting	8-DIP (0.300" 7.62mm)	-40 °C	150 °C	8-PDIP	200 V	0.8 V 2.5 V	70 ns	35 ns	600 mA	290 mA	2	Half-Bridge	Independent
INFINEON IRS2001STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	20 V	10 VDC	Surface Mount	Non-Inverting	8-SOIC	-40 °C	150 °C	8-SOIC	200 V	0.8 V 2.5 V	70 ns	35 ns	600 mA	290 mA	2	Half-Bridge	Independent	0.154 in	3.9 mm
INFINEON IRS2001PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	20 V	10 VDC	Through Hole	Non-Inverting	8-DIP (0.300" 7.62mm)	-40 °C	150 °C	8-PDIP	200 V	0.8 V 2.5 V	70 ns	35 ns	600 mA	290 mA	2	Half-Bridge	Independent
INFINEON IRS2001SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	20 V	10 VDC	Surface Mount	Non-Inverting	8-SOIC	-40 °C	150 °C	8-SOIC	200 V	0.8 V 2.5 V	70 ns	35 ns	600 mA	290 mA	2	Half-Bridge	Independent	0.154 in	3.9 mm