Discrete Semiconductor Products

PSMN1R1-30PL,127

Obsolete

MOSFET N-CH 30V 120A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 120A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN1R1-30PL,127

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	243 nC
Input Capacitance (Ciss) (Max) @ Vds	14850 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	338 W
Rds On (Max) @ Id, Vgs	1.3 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drain to Source Voltage (Vdss)
Freescale Semiconductor - NXP PSMN1R1-30PL,127	TO-220AB	1.3 mOhm	4.5 V 10 V	20 V	243 nC	Through Hole	338 W	-55 °C	175 ░C	2.2 V	120 A	MOSFET (Metal Oxide)	N-Channel	14850 pF	TO-220-3	30 V
Freescale Semiconductor - NXP PSMN1R1-25YLC,115	LFPAK56 Power-SO8	1.15 mOhm	4.5 V 10 V	20 V	83 nC	Surface Mount	215 W	-55 °C	175 ░C		100 A	MOSFET (Metal Oxide)	N-Channel	5287 pF	SC-100 SOT-669	25 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 120A (Tc) 338W (Tc) Through Hole TO-220AB

Technical documentation and resources