FDD86110 Series

Shielded Gate PowerTrench® MOSFET, N-Channel, 100 V, 50 A, 10.2 mΩ

Catalog

Shielded Gate PowerTrench® MOSFET, N-Channel, 100 V, 50 A, 10.2 mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FDD86110	2265 pF	Surface Mount	35 nC	TO-252AA	N-Channel	100 V	3.1 W 127 W	10.2 mOhm	6 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	-55 °C	150 °C	MOSFET (Metal Oxide)	4 V	12.5 A 50 A

Catalog

Shielded Gate PowerTrench® MOSFET, N-Channel, 100 V, 50 A, 10.2 mΩ

Key Features

• Max rDS(on)= 10.2 mΩ at VGS = 10 V, ID = 12.5 A

• Max rDS(on)= 16 mΩ at VGS = 6 V, ID = 9.8 A

• 100% UIL tested

• RoHS Compliant"

Description

This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.