Specification	BUK9D23-40EX

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	637 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	15 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	23 mOhm
Supplier Device Package	DFN2020MD-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2.1 V

BUK9D23-40E Series

40 V, N-channel Trench MOSFET

Part	Package / Case	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Grade	Qualification	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Power Dissipation (Max)	Technology
Nexperia USA Inc. BUK9D23-40EX	6-UDFN Exposed Pad	N-Channel	DFN2020MD-6	637 pF	15 V	4.5 V 10 V	Automotive	AEC-Q101	17 nC	23 mOhm	2.1 V	40 V	8 A	175 °C	-55 °C	Surface Mount	15 W	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	48	$ 0.80

Description

General part information

BUK9D23-40E Series

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.