Discrete Semiconductor Products

PSMN4R2-80YSEX

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POWER MOSFET, N CHANNEL, 80 V, 170 A, 4.2 MILLIOHMS, LFPAK56E, 4 PINS, SURFACE MOUNT

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Search across all available documentation for this part.

DocumentsPSMN4R2-80YSEX Datasheet (PDF)Power MOSFET Single-Shot and Repetitive Avalanche Ruggedness Rating - June 20, 2022 (PDF)+14

Discrete Semiconductor Products

PSMN4R2-80YSEX

Active

Nexperia USA Inc.

POWER MOSFET, N CHANNEL, 80 V, 170 A, 4.2 MILLIOHMS, LFPAK56E, 4 PINS, SURFACE MOUNT

Deep-Dive with AI

DocumentsPSMN4R2-80YSEX Datasheet (PDF)Power MOSFET Single-Shot and Repetitive Avalanche Ruggedness Rating - June 20, 2022 (PDF)+14

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN4R2-80YSEX

Current - Continuous Drain (Id) @ 25°C	170 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	110 nC
Input Capacitance (Ciss) (Max) @ Vds	8000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-1023, 4-LFPAK
Power Dissipation (Max)	294 W
Rds On (Max) @ Id, Vgs	4.2 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.6 V

PSMN4R2-80YSE Series

N-channel 80 V, 4.2 mOhm MOSFET with enhanced SOA in LFPAK56E

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]
Nexperia USA Inc. PSMN4R2-80YSEX	10 V	80 V	170 A	4.2 mOhm	SOT-1023 4-LFPAK	LFPAK56 Power-SO8	294 W	Surface Mount	3.6 V	8000 pF	MOSFET (Metal Oxide)	110 nC	N-Channel	20 V	175 °C	-55 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	115	$ 4.35
Mouser	N/A	1	$ 3.28
		10	$ 2.27
		100	$ 1.59
		500	$ 1.32
		1500	$ 1.28

Description

General part information

PSMN4R2-80YSE Series

N-channel enhancement mode MOSFET in a LFPAK56E package qualified to 175 °C. Part of Nexperia's "ASFETs for hotswap" portfolio, the PSMN4R2-80YSE delivers very low RDSonand a very strong linear-mode (SOA) performance in a high-reliability copper-clip LFPAK56E package.