Discrete Semiconductor Products

SISC06DN-T1-GE3

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MOSFET N-CH 30V 27.6A/40A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 30V 27.6A/40A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SISC06DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	27.6 A, 40 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	58 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2455 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	46.3 W, 3.7 W
Rds On (Max) @ Id, Vgs [Max]	2.7 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id	2.1 V

Part	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Technology	Package / Case	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SISC06DN-T1-GE3	Surface Mount	-16 V 20 V	58 nC	PowerPAK® 1212-8	2.7 mOhm	2455 pF	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	PowerPAK® 1212-8	3.7 W 46.3 W	4.5 V 10 V	30 V	27.6 A 40 A	2.1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 27.6A (Ta), 40A (Tc) 3.7W (Ta), 46.3W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources