SISC06 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 27.6A/40A PPAK
| Part | Mounting Type | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Rds On (Max) @ Id, Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Technology | Package / Case | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | Surface Mount | -16 V 20 V | 58 nC | PowerPAK® 1212-8 | 2.7 mOhm | 2455 pF | -55 °C | 150 °C | N-Channel | MOSFET (Metal Oxide) | PowerPAK® 1212-8 | 3.7 W 46.3 W | 4.5 V 10 V | 30 V | 27.6 A 40 A | 2.1 V |