Discrete Semiconductor Products

WNSC401200CWQ

Obsolete

DIODE SIL CARB 1.2KV 40A TO247-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE SIL CARB 1.2KV 40A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	WNSC401200CWQ

Capacitance @ Vr, F	810 pF
Current - Average Rectified (Io)	40 A
Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-247-3
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]	1.75 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Technology	Package / Case	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If [Max]	Operating Temperature - Junction [Max]	Mounting Type	Current - Average Rectified (Io)	Supplier Device Package	Speed	Reverse Recovery Time (trr)
WeEn Semiconductors WNSC401200CWQ	1.2 kV	200 µA	SiC (Silicon Carbide) Schottky	TO-247-3	810 pF	1.75 V	175 ░C	Through Hole	40 A	TO-247-3	500 mA	0 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode 1200 V 40A Through Hole TO-247-3

Technical documentation and resources

No documents available