Discrete Semiconductor Products

ST13007D

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TRANS GP BJT NPN 400V 8A 3-PIN(3+TAB) TO-220 TUBE

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Discrete Semiconductor Products

Active

TRANS GP BJT NPN 400V 8A 3-PIN(3+TAB) TO-220 TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	ST13007D

Current - Collector (Ic) (Max) [Max]	8 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	8
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	80 W
Supplier Device Package	TO-220
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	400 V

High voltage fast-switching NPN power transistor

Part	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Current - Collector (Ic) (Max) [Max]	Package / Case
STMicroelectronics ST13007D	150 °C	8	TO-220	80 W	2 V	Through Hole	100 µA	400 V	NPN	8 A	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	6275	$ 2.12

General part information

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.

It uses a Cellular Emitter structure to enhance switching speeds.

Technical documentation and resources