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STMICROELECTRONICS STL10N60M6
Discrete Semiconductor Products

STL7DN6LF3

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STMicroelectronics

AUTOMOTIVE-GRADE DUAL N-CHANNEL 60 V, 35 MOHM TYP., 6.5 A STRIPFET F3 POWER MOSFET IN POWERFLAT 5X6 DOUBLE ISLAND PACKAGE

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STMICROELECTRONICS STL10N60M6
Discrete Semiconductor Products

STL7DN6LF3

Active
STMicroelectronics

AUTOMOTIVE-GRADE DUAL N-CHANNEL 60 V, 35 MOHM TYP., 6.5 A STRIPFET F3 POWER MOSFET IN POWERFLAT 5X6 DOUBLE ISLAND PACKAGE

Technical Specifications

Parameters and characteristics for this part

SpecificationSTL7DN6LF3
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C20 A
Drain to Source Voltage (Vdss)60 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs8.8 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds432 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power - Max [Max]52 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs43 mOhm
Supplier Device PackagePowerFlat™ (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 10468$ 1.74
NewarkEach (Supplied on Cut Tape) 1$ 2.13
10$ 1.83
25$ 1.70
50$ 1.56
100$ 1.43
250$ 1.43
500$ 1.26
1000$ 1.21

Description

General part information

STL7DN6LF3 Series

This device is a dual N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.