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PowerPAK SO-8
Discrete Semiconductor Products

SIR872DP-T1-GE3

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 150V 53.7A PPAK SO-8

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PowerPAK SO-8
Discrete Semiconductor Products

SIR872DP-T1-GE3

Active
Vishay General Semiconductor - Diodes Division

MOSFET N-CH 150V 53.7A PPAK SO-8

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSIR872DP-T1-GE3
Current - Continuous Drain (Id) @ 25°C53.7 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]64 nC
Input Capacitance (Ciss) (Max) @ Vds2130 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CasePowerPAK® SO-8
Power Dissipation (Max)6.25 W, 104 W
Rds On (Max) @ Id, Vgs [Max]18 mOhm
Supplier Device PackagePowerPAK® SO-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.75
10$ 2.29
100$ 1.82
500$ 1.54
1000$ 1.31
Digi-Reel® 1$ 2.75
10$ 2.29
100$ 1.82
500$ 1.54
1000$ 1.31
Tape & Reel (TR) 3000$ 1.15

Description

General part information

SIR872 Series

N-Channel 150 V 53.7A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

Documents

Technical documentation and resources