SIR872 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 150V 53.7A PPAK SO-8
| Part | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Rds On (Max) @ Id, Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | FET Type | Package / Case | Vgs (Max) | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 4.5 V | 53.7 A | 150 V | 1286 pF | PowerPAK® SO-8 | 18 mOhm | -55 °C | 150 °C | 6.25 W 104 W | Surface Mount | 10 V | 7.5 V | N-Channel | PowerPAK® SO-8 | 20 V | MOSFET (Metal Oxide) | ||
Vishay General Semiconductor - Diodes Division | 3.5 V | 53.7 A | 150 V | 2130 pF | PowerPAK® SO-8 | 18 mOhm | -55 °C | 150 °C | 6.25 W 104 W | Surface Mount | N-Channel | PowerPAK® SO-8 | 20 V | MOSFET (Metal Oxide) | 64 nC | 10 V |