Discrete Semiconductor Products

FDC606P

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MOSFET TRANSISTOR, P CHANNEL, 6 A, -12 V, 26 MOHM, -4.5 V, -500 MV ROHS COMPLIANT: YES

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Discrete Semiconductor Products

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MOSFET TRANSISTOR, P CHANNEL, 6 A, -12 V, 26 MOHM, -4.5 V, -500 MV ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	FDC606P

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1699 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Rds On (Max) @ Id, Vgs	26 mOhm
Supplier Device Package	SuperSOT™-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.5 V

P-Channel PowerTrench<sup>®</sup> MOSFET,1.8V Specified, -12V, -6A, 26mΩ

Part	Mounting Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FDC606P	Surface Mount	8 V	-55 °C	150 °C	6 A	MOSFET (Metal Oxide)	1699 pF	P-Channel	1.5 V	SuperSOT™-6	25 nC	26 mOhm	12 V	SOT-23-6 Thin TSOT-23-6	1.8 V 4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This P-Channel 1.8V specified MOSFET uses a low voltage PowerTrench process. It has been optimized for battery power management applications.