Discrete Semiconductor Products

SSM6J215FE(TE85L,F

Active

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -20 V, -3.4 A, 0.059 Ω@4.5V, SOT-563(ES6)

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -20 V, -3.4 A, 0.059 Ω@4.5V, SOT-563(ES6)

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6J215FE(TE85L,F

Current - Continuous Drain (Id) @ 25°C	3.4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.5 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	10.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	630 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-563, SOT-666
Power Dissipation (Max)	500 mW
Rds On (Max) @ Id, Vgs	59 mOhm
Supplier Device Package	ES6
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	1 V

Part	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology	Rds On (Max) @ Id, Vgs	Vgs (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature	Package / Case
Toshiba Semiconductor and Storage SSM6J215FE(TE85L,F	500 mW	20 V	10.4 nC	Surface Mount	3.4 A	MOSFET (Metal Oxide)	59 mOhm	8 V	1.5 V 4.5 V	ES6	P-Channel	1 V	630 pF	150 °C	SOT-563 SOT-666

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 3.4A (Ta) 500mW (Ta) Surface Mount ES6

Technical documentation and resources