SSM6J215 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -20 V, -3.4 A, 0.059 Ω@4.5V, SOT-563(ES6)
| Part | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Technology | Rds On (Max) @ Id, Vgs | Vgs (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | FET Type | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | Operating Temperature | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 500 mW | 20 V | 10.4 nC | Surface Mount | 3.4 A | MOSFET (Metal Oxide) | 59 mOhm | 8 V | 1.5 V 4.5 V | ES6 | P-Channel | 1 V | 630 pF | 150 °C | SOT-563 SOT-666 |