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Technical Specifications
Parameters and characteristics for this part
| Specification | BUK6Q8R2-30PJ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 82 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 3800 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 94 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 8.2 mOhm |
| Supplier Device Package | MLPAK33 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 1.33 | |
Description
General part information
BUK6Q8R2-30P Series
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-3) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Documents
Technical documentation and resources