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30 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-3) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, P-channel Trench MOSFET
30 V, P-channel Trench MOSFET
| Part | Grade | Mounting Type | Package / Case | Power Dissipation (Max) | FET Type | Qualification | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Technology | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Vgs (Max) | Vgs(th) (Max) @ Id | Operating Temperature [Max] | Operating Temperature [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | Automotive | Surface Mount Wettable Flank | 8-PowerVDFN | 94 W | P-Channel | AEC-Q101 | 3800 pF | 8.2 mOhm | MLPAK33 | 4.5 V 10 V | MOSFET (Metal Oxide) | 82 A | 110 nC | 30 V | 20 V | 2.7 V | 175 °C | -55 °C |