Specification	PMPB05R4ENX

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds	984 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power Dissipation (Max)	19 W, 1.7 W
Rds On (Max) @ Id, Vgs	6.6 mOhm
Supplier Device Package	DFN2020M-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

PMPB05R4EN Series

30 V, N-channel Trench MOSFET

Part	Technology	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C
Nexperia USA Inc. PMPB05R4ENX	MOSFET (Metal Oxide)	Surface Mount	150 °C	-55 °C	DFN2020M-6	N-Channel	2.2 V	22 nC	4.5 V 10 V	6.6 mOhm	30 V	984 pF	6-UDFN Exposed Pad	20 V	1.7 W 19 W	13 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.26

Description

General part information

PMPB05R4EN Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-4) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Documents

Technical documentation and resources

30 V, N-channel Trench MOSFET

Data sheet

DFN2020MD-6 ; Reel pack for SMD, 7"; Q2/T3 product orientation

Packing information

plastic thermal enhanced ultra thin small outline package; no leads;6 terminals; body 2 x 2 x 0.60 mm

Package information