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30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-4) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Technology | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | FET Type | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Vgs (Max) | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | MOSFET (Metal Oxide) | Surface Mount | 150 °C | -55 °C | DFN2020M-6 | N-Channel | 2.2 V | 22 nC | 4.5 V 10 V | 6.6 mOhm | 30 V | 984 pF | 6-UDFN Exposed Pad | 20 V | 1.7 W 19 W | 13 A |