Discrete Semiconductor Products
STGWA30M65DF2AG
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE TRENCH GATE FIELD-STOP 650 V, 30 A LOW-LOSS M SERIES IGBT IN A TO-247 LONG LEADS PACKAGE
Discrete Semiconductor Products
STGWA30M65DF2AG
ActiveSTMicroelectronics
AUTOMOTIVE-GRADE TRENCH GATE FIELD-STOP 650 V, 30 A LOW-LOSS M SERIES IGBT IN A TO-247 LONG LEADS PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STGWA30M65DF2AG |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 87 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Gate Charge | 81.6 nC |
| Grade | Automotive |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 441 W |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 151 ns |
| Supplier Device Package | TO-247 Long Leads |
| Switching Energy | 1.057 mJ, 756 µJ |
| Td (on/off) @ 25°C [custom] | 138 ns |
| Td (on/off) @ 25°C [custom] | 21.6 ns |
| Test Condition | 30 A, 10 Ohm, 15 V, 400 V |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGWA30M65DF2AG Series
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.