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PG-TSON-8-3
Discrete Semiconductor Products

BSC012N06NSATMA1

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INFINEON

OPTIMOS™ POWER MOSFET 60 V IN SUPERSO8 PACKAGE

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PG-TSON-8-3
Discrete Semiconductor Products

BSC012N06NSATMA1

Active
INFINEON

OPTIMOS™ POWER MOSFET 60 V IN SUPERSO8 PACKAGE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC012N06NSATMA1
Current - Continuous Drain (Id) @ 25°C306 A, 36 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 6 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]143 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]11000 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max) [Max]214 W
Rds On (Max) @ Id, Vgs1.2 mOhm
Supplier Device PackagePG-TSON-8-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.24
10$ 2.80
100$ 1.98
500$ 1.63
1000$ 1.52
Digi-Reel® 1$ 4.24
10$ 2.80
100$ 1.98
500$ 1.63
1000$ 1.52
N/A 0$ 4.25
Tape & Reel (TR) 5000$ 1.52

Description

General part information

BSC012 Series

Infineon'sOptiMOS™ MOSFETs in SuperSO8package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.

Documents

Technical documentation and resources