Discrete Semiconductor Products
SCS308AGC16
ActiveRohm Semiconductor
SILICON CARBIDE SCHOTTKY DIODE, SINGLE DUAL CATHODE, 650 V, 8 A, 21 NC, TO-220ACGE
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Discrete Semiconductor Products
SCS308AGC16
ActiveRohm Semiconductor
SILICON CARBIDE SCHOTTKY DIODE, SINGLE DUAL CATHODE, 650 V, 8 A, 21 NC, TO-220ACGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | SCS308AGC16 |
|---|---|
| Capacitance @ Vr, F | 400 pF |
| Current - Average Rectified (Io) | 8 A |
| Current - Reverse Leakage @ Vr | 40 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | 175 °C |
| Package / Case | TO-220-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | 500 mA |
| Supplier Device Package | TO-220ACFP |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SCS308AG Series
Switching loss reduced, enabling high-speed switching.
Documents
Technical documentation and resources