Catalog
650V, 8A, THD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching.
Beta
⌘K
650V, 8A, THD, Silicon-carbide (SiC) SBD
650V, 8A, THD, Silicon-carbide (SiC) SBD
| Part | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) | Technology | Supplier Device Package | Capacitance @ Vr, F | Speed | Operating Temperature - Junction | Package / Case | Current - Reverse Leakage @ Vr | Mounting Type | Reverse Recovery Time (trr) | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 650 V | 8 A | SiC (Silicon Carbide) Schottky | TO-220ACFP | 400 pF | 500 mA | 175 °C | TO-220-2 | 40 µA | Through Hole | 0 ns | 1.5 V |