Discrete Semiconductor Products

UPA1872BGR-9JG-E1-A

Obsolete

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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Discrete Semiconductor Products

Obsolete

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Technical Specifications

Parameters and characteristics for this part

Specification	UPA1872BGR-9JG-E1-A

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	10 nC
Input Capacitance (Ciss) (Max) @ Vds	945 pF
Mounting Type	Surface Mount
Package / Case	8-TSSOP
Package / Case [custom]	0.173 "
Package / Case [custom]	4.4 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	8-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

N-Channel Mos Field Effect Transistor For Switching

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	FET Feature	Power - Max [Max]	Package / Case	Package / Case [custom]	Package / Case [custom]	Configuration	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Mounting Type	Gate Charge (Qg) (Max) @ Vgs
Renesas Electronics Corporation UPA1872BGR-9JG-E1-A	8-TSSOP	20 V	1.5 V	MOSFET (Metal Oxide)	Logic Level Gate	2 W	8-TSSOP	0.173 "	4.4 mm	2 N-Channel (Dual)	10 A	945 pF	13 mOhm	Surface Mount	10 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	378	$ 0.79

General part information

The UPA1872BGR is a N-Channel Mos Field Effect Transistor For Switching.

Technical documentation and resources

No documents available