N-Channel Mos Field Effect Transistor For Switching
N-Channel Mos Field Effect Transistor For Switching
N-Channel Mos Field Effect Transistor For Switching
| Part | Supplier Device Package | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Technology | FET Feature | Power - Max [Max] | Package / Case | Package / Case [custom] | Package / Case [custom] | Configuration | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Mounting Type | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Renesas Electronics Corporation | 8-TSSOP | 20 V | 1.5 V | MOSFET (Metal Oxide) | Logic Level Gate | 2 W | 8-TSSOP | 0.173 " | 4.4 mm | 2 N-Channel (Dual) | 10 A | 945 pF | 13 mOhm | Surface Mount | 10 nC |