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STGD25N36LZAG
Discrete Semiconductor Products

STGD25N36LZAG

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STMicroelectronics

AUTOMOTIVE-GRADE 360 V INTERNALLY CLAMPED IGBT ESCIS 300 MJ

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STGD25N36LZAG
Discrete Semiconductor Products

STGD25N36LZAG

Active
STMicroelectronics

AUTOMOTIVE-GRADE 360 V INTERNALLY CLAMPED IGBT ESCIS 300 MJ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGD25N36LZAG
Current - Collector (Ic) (Max) [Max]25 A
Current - Collector Pulsed (Icm)50 A
Gate Charge25.7 nC
Input TypeLogic
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power - Max [Max]150 W
Supplier Device PackageTO-252 (DPAK)
Td (on/off) @ 25°C7.4 µs, 1.1 µs
Vce(on) (Max) @ Vge, Ic1.25 V
Voltage - Collector Emitter Breakdown (Max) [Max]350 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.56

Description

General part information

STGD25N36LZAG Series

This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required.