Discrete Semiconductor Products

RJP65T54DPM-A0#T2

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IGBTS IGBT - 650V/30A/TO-3PFP

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Discrete Semiconductor Products

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IGBTS IGBT - 650V/30A/TO-3PFP

Technical Specifications

Parameters and characteristics for this part

Specification	RJP65T54DPM-A0#T2

Current - Collector (Ic) (Max) [Max]	60 A
Gate Charge	72 nC
IGBT Type	Trench
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	SC-94
Power - Max [Max]	63.5 W
Supplier Device Package	TO-3PFP
Switching Energy	760 µJ, 330 µJ
Td (on/off) @ 25°C	35 ns, 120 ns
Test Condition	30 A, 10 Ohm, 15 V, 400 V
Vce(on) (Max) @ Vge, Ic	1.68 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

IGBT 650V 30A TO-3PFP

Part	Vce(on) (Max) @ Vge, Ic	Gate Charge	Current - Collector (Ic) (Max) [Max]	IGBT Type	Power - Max [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Td (on/off) @ 25°C	Mounting Type	Test Condition	Switching Energy	Operating Temperature	Current - Collector Pulsed (Icm)
Renesas Electronics Corporation RJP65T54DPM-A0#T2	1.68 V	72 nC	60 A	Trench	63.5 W	SC-94	650 V	TO-3PFP	35 ns 120 ns	Through Hole	10 Ohm 15 V 30 A 400 V	330 µJ 760 µJ	175 °C
Renesas Electronics Corporation RJP65T54DPM-E0#T2	1.68 V	72 nC	60 A	Trench	63.5 W	SC-93-3 TO-3PFM	650 V	TO-3PF	35 ns 120 ns	Through Hole	10 Ohm 15 V 30 A 400 V	330 µJ 760 µJ	175 °C	225 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The RJP65T54DPM-A0 650V, 60A trench insulated-gate bipolar transistor (IGBT) offers through hole mounting and comes in a TO-3PFP package.

Technical documentation and resources