Catalog
IGBT 650V 30A TO-3PFP
Description
AI
The RJP65T54DPM-A0 650V, 60A trench insulated-gate bipolar transistor (IGBT) offers through hole mounting and comes in a TO-3PFP package.
Beta
⌘K
IGBT 650V 30A TO-3PFP
IGBT 650V 30A TO-3PFP
| Part | Vce(on) (Max) @ Vge, Ic | Gate Charge | Current - Collector (Ic) (Max) [Max] | IGBT Type | Power - Max [Max] | Package / Case | Voltage - Collector Emitter Breakdown (Max) [Max] | Supplier Device Package | Td (on/off) @ 25°C | Mounting Type | Test Condition | Switching Energy | Operating Temperature | Current - Collector Pulsed (Icm) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Renesas Electronics Corporation | 1.68 V | 72 nC | 60 A | Trench | 63.5 W | SC-94 | 650 V | TO-3PFP | 35 ns 120 ns | Through Hole | 10 Ohm 15 V 30 A 400 V | 330 µJ 760 µJ | 175 °C | |
 Renesas Electronics Corporation | 1.68 V | 72 nC | 60 A | Trench | 63.5 W | SC-93-3 TO-3PFM | 650 V | TO-3PF | 35 ns 120 ns | Through Hole | 10 Ohm 15 V 30 A 400 V | 330 µJ 760 µJ | 175 °C | 225 A |