Discrete Semiconductor Products

IRFU110PBF

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MOSFET N-CH 100V 4.3A TO251AA

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Discrete Semiconductor Products

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MOSFET N-CH 100V 4.3A TO251AA

Technical Specifications

Parameters and characteristics for this part

Specification	IRFU110PBF

Current - Continuous Drain (Id) @ 25°C	4.3 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	8.3 nC
Input Capacitance (Ciss) (Max) @ Vds	180 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	540 mOhm
Supplier Device Package	TO-251AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Vgs (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division IRFU110PBF	TO-251AA	IPAK TO-251-3 Short Leads TO-251AA	540 mOhm	100 V	Through Hole	MOSFET (Metal Oxide)	20 V	N-Channel	4.3 A	10 V	4 V	180 pF	-55 °C	150 °C	8.3 nC	25 W

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General part information

N-Channel 100 V 4.3A (Tc) 25W (Tc) Through Hole TO-251AA

Technical documentation and resources