IRFU110 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 100V 4.3A TO251AA
| Part | Supplier Device Package | Package / Case | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Mounting Type | Technology | Vgs (Max) | FET Type | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | TO-251AA | IPAK TO-251-3 Short Leads TO-251AA | 540 mOhm | 100 V | Through Hole | MOSFET (Metal Oxide) | 20 V | N-Channel | 4.3 A | 10 V | 4 V | 180 pF | -55 °C | 150 °C | 8.3 nC | 25 W |