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FGY4L100T120SWD
Discrete Semiconductor Products

FGY4L140T120SWD

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ON Semiconductor

IGBT – POWER, CO-PAK N-CHANNEL, FIELD STOP VII (FS7), TO247-4L 1200 V, 1.7 V, 140 A

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FGY4L100T120SWD
Discrete Semiconductor Products

FGY4L140T120SWD

Active
ON Semiconductor

IGBT – POWER, CO-PAK N-CHANNEL, FIELD STOP VII (FS7), TO247-4L 1200 V, 1.7 V, 140 A

Technical Specifications

Parameters and characteristics for this part

SpecificationFGY4L140T120SWD
Current - Collector (Ic) (Max) [Max]200 A
Current - Collector Pulsed (Icm)560 A
Gate Charge426 nC
IGBT TypeField Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-4
Power - Max [Max]1250 W
Reverse Recovery Time (trr)266.9 ns
Supplier Device PackageTO-247-4L
Switching Energy4.6 mJ, 3.9 mJ
Test Condition15 V, 140 A, 600 V, 4.7 Ohm
Vce(on) (Max) @ Vge, Ic2 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 14.58
10$ 10.25
100$ 7.80
500$ 7.46
ON SemiconductorN/A 1$ 7.96

Description

General part information

FGY4L140T120SWD Series

Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 4−lead package, FGY4L140T120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like Solar Inverter, UPS and ESS.