Isolators

HMHAA280R1

Obsolete

ON Semiconductor

OPTOISO 3.75KV TRANSISTOR 4SMD

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Isolators

HMHAA280R1

Obsolete

ON Semiconductor

OPTOISO 3.75KV TRANSISTOR 4SMD

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	HMHAA280R1

Current - DC Forward (If) (Max)	50 mA
Current - Output / Channel	50 mA
Current Transfer Ratio (Max) [Max]	600 %
Current Transfer Ratio (Min) [Min]	50 %
Mounting Type	Surface Mount
Number of Channels	1
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-55 °C
Output Type	1.81 mOhm
Package / Case	4-SOIC
Package / Case [x]	0.173 in
Package / Case [y]	4.4 mm
Rise / Fall Time (Typ) [custom]	3 µs
Rise / Fall Time (Typ) [custom]	3 µs
Supplier Device Package	4-Mini-Flat
Vce Saturation (Max) [Max]	400 mV
Voltage - Forward (Vf) (Typ) [Max]	1.4 V
Voltage - Isolation	3750 Vrms

HMHAA280 Series

4-Pin Half Pitch MFP AC Input Phototransistor Output Optocoupler

Part	Mounting Type	Package / Case [y]	Package / Case	Package / Case [x]	Voltage - Forward (Vf) (Typ) [Max]	Supplier Device Package	Number of Channels	Operating Temperature [Max]	Operating Temperature [Min]	Current Transfer Ratio (Min) [Min]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Current Transfer Ratio (Max) [Max]	Voltage - Isolation	Current - Output / Channel	Vce Saturation (Max) [Max]	Output Type	Current - DC Forward (If) (Max)
ON Semiconductor HMHAA280R2	Surface Mount	4.4 mm	4-SOIC	0.173 in	1.4 V	4-Mini-Flat	1	100 °C	-55 °C	50 %	3 µs	3 µs	600 %	3750 Vrms	50 mA	400 mV	1.81 mOhm	50 mA
ON Semiconductor HMHAA280R1	Surface Mount	4.4 mm	4-SOIC	0.173 in	1.4 V	4-Mini-Flat	1	100 °C	-55 °C	50 %	3 µs	3 µs	600 %	3750 Vrms	50 mA	400 mV	1.81 mOhm	50 mA
ON Semiconductor HMHAA280V	Surface Mount	4.4 mm	4-SOIC	0.173 in	1.4 V	4-Mini-Flat	1	100 °C	-55 °C	50 %	3 µs	3 µs	600 %	3750 Vrms	50 mA	400 mV	1.81 mOhm	50 mA
ON Semiconductor HMHAA280	Surface Mount	4.4 mm	4-SOIC	0.173 in	1.4 V	4-Mini-Flat	1	100 °C	-55 °C	50 %	3 µs	3 µs	600 %	3750 Vrms	50 mA	400 mV	1.81 mOhm	50 mA
ON Semiconductor HMHAA280R3V	Surface Mount	4.4 mm	4-SOIC	0.173 in	1.4 V	4-Mini-Flat	1	100 °C	-55 °C	50 %	3 µs	3 µs	600 %	3750 Vrms	50 mA	400 mV	1.81 mOhm	50 mA
ON Semiconductor HMHAA280R4	Surface Mount	4.4 mm	4-SOIC	0.173 in	1.4 V	4-Mini-Flat	1	100 °C	-55 °C	50 %	3 µs	3 µs	600 %	3750 Vrms	50 mA	400 mV	1.81 mOhm	50 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

HMHAA280 Series

The HMHAA280 series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 1.27mm.

Documents

Technical documentation and resources