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TO-39 TO-205AD
Discrete Semiconductor Products

2N2905AP

Active
Microchip Technology

SMALL-SIGNAL BJT TO-39 ROHS COMPLIANT: YES

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Search across all available documentation for this part.

Documents2N2904 2N2904A 2N2905 2N2905AProduct Change Notice EN
TO-39 TO-205AD
Discrete Semiconductor Products

2N2905AP

Active
Microchip Technology

SMALL-SIGNAL BJT TO-39 ROHS COMPLIANT: YES

Deep-Dive with AI

Documents2N2904 2N2904A 2N2905 2N2905AProduct Change Notice EN

Technical Specifications

Parameters and characteristics for this part

Specification2N2905AP
Current - Collector (Ic) (Max) [Max]600 mA
Current - Collector Cutoff (Max) [Max]1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Mounting TypeThrough Hole
Package / CaseTO-39-3 Metal Can, TO-205AD
Power - Max [Max]600 mW
Supplier Device PackageTO-39 (TO-205AD)
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1.6 V
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 20.86
Microchip DirectN/A 1$ 22.47
NewarkEach 100$ 20.87
500$ 20.06

Description

General part information

2N2905AP-Transistor-PIND Series

This specification covers the performance requirements for PNP, silicon, switching 2N2904, 2N2904A, 2N2904AL, 2N2905, 2N2905A and 2N2905AL transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/290. Provision for radiation hardness assurance (RHA) to eight radiation test levels is provided for JANTXV and JANS product assurance levels for type 2N2905A. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices which have passed RHA requirements.The device package outline for this specification sheet is similar to TO-39 for all encapsulated device types.