Discrete Semiconductor Products
GT30J65MRB,S1E
ActiveToshiba Semiconductor and Storage
650V SILICON N-CHANNEL IGBT, TO-
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
GT30J65MRB,S1E
ActiveToshiba Semiconductor and Storage
650V SILICON N-CHANNEL IGBT, TO-
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | GT30J65MRB,S1E |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 60 A |
| Gate Charge | 70 nC |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | SC-65-3, TO-3P-3 |
| Power - Max [Max] | 200 W |
| Reverse Recovery Time (trr) | 200 ns |
| Supplier Device Package | TO-3P(N) |
| Switching Energy | 220 µJ, 1.4 mJ |
| Td (on/off) @ 25°C | 75 ns, 400 ns |
| Test Condition | 56 Ohm, 15 A, 400 V, 15 V |
| Vce(on) (Max) @ Vge, Ic | 1.8 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 25 | $ 3.82 | |
| Tube | 1 | $ 3.27 | ||
| 10 | $ 2.13 | |||
| 100 | $ 1.48 | |||
| 500 | $ 1.20 | |||
| 1000 | $ 1.11 | |||
| 2000 | $ 1.06 | |||
Description
General part information
GT30J65 Series
IGBTs
Documents
Technical documentation and resources