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IGBTs
| Part | Voltage - Collector Emitter Breakdown (Max) [Max] | Supplier Device Package | Current - Collector (Ic) (Max) [Max] | Operating Temperature | Td (on/off) @ 25°C | Mounting Type | Switching Energy | Gate Charge | Test Condition | Reverse Recovery Time (trr) | Power - Max [Max] | Package / Case | Vce(on) (Max) @ Vge, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 650 V | TO-3P(N) | 60 A | 175 °C | 75 ns 400 ns | Through Hole | 1.4 mJ 220 µJ | 70 nC | 15 A 15 V 56 Ohm 400 V | 200 ns | 200 W | SC-65-3 TO-3P-3 | 1.8 V |