Specification	NTHS2101PT1

Current - Continuous Drain (Id) @ 25°C	5.4 A
Drain to Source Voltage (Vdss)	8 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	2400 pF
Mounting Type	Surface Mount
Power Dissipation (Max)	1.3 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	ChipFET™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.5 V

NTHS2101P Series

Power MOSFET 8V 7.5A 25 mOhm Single P-Channel ChipFET

Part	Power Dissipation (Max)	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)
ON Semiconductor NTHS2101PT1	1.3 W	MOSFET (Metal Oxide)	1.5 V	1.8 V 4.5 V	2400 pF	P-Channel	Surface Mount	5.4 A	30 nC	ChipFET™	25 mOhm	8 V	8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET -8 V, -7.5 A, Single P-Channel ChipFET™

Technical documentation and resources