Discrete Semiconductor Products

STD1NK60-1

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STMicroelectronics

N-CHANNEL 600 V, 7.3 OHM TYP., 1 A SUPERMESH POWER MOSFET IN IPAK PACKAGE

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DocumentsDatasheet STD1NK60-1 | Datasheet

Discrete Semiconductor Products

STD1NK60-1

Active

STMicroelectronics

N-CHANNEL 600 V, 7.3 OHM TYP., 1 A SUPERMESH POWER MOSFET IN IPAK PACKAGE

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DocumentsDatasheet STD1NK60-1 | Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STD1NK60-1

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10 nC
Input Capacitance (Ciss) (Max) @ Vds	156 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Rds On (Max) @ Id, Vgs	8.5 Ohm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.7 V

STD1NK60-1 Series

N-channel 600 V, 7.3 Ohm typ., 1 A SuperMESH Power MOSFET in IPAK package

Part	Mounting Type	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
STMicroelectronics STD1NK60-1	Through Hole	IPAK TO-251-3 Short Leads TO-251AA	N-Channel	600 V	8.5 Ohm	150 °C	-55 °C	1 A	3.7 V	30 V	MOSFET (Metal Oxide)	10 nC	10 V	156 pF	IPAK

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1852	$ 0.91

Description

General part information

STD1NK60-1 Series

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.