Discrete Semiconductor Products

MJD122-1G

Obsolete

ON Semiconductor

8.0 A, 100 V NPN DARLINGTON BIPOLAR POWER TRANSISTOR

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Discrete Semiconductor Products

MJD122-1G

Obsolete

ON Semiconductor

8.0 A, 100 V NPN DARLINGTON BIPOLAR POWER TRANSISTOR

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MJD122-1G

Current - Collector (Ic) (Max) [Max]	8 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 hFE
Frequency - Transition	4 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	1.75 W
Supplier Device Package	DPAK
Vce Saturation (Max) @ Ib, Ic	4 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

MJD122 Series

8.0 A, 100 V NPN Darlington Bipolar Power Transistor

Part	Frequency - Transition	Power - Max [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor MJD122-1G	4 MHz	1.75 W	DPAK	100 V	Surface Mount	10 µA	DPAK (2 Leads + Tab) SC-63 TO-252-3	150 °C	-65 °C	8 A	1000 hFE	4 V
ON Semiconductor MJD122RLG	4 MHz	1.75 W	DPAK	100 V	Surface Mount	10 µA	DPAK (2 Leads + Tab) SC-63 TO-252-3	150 °C	-65 °C	8 A	1000 hFE	4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MJD122 Series

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD122 (NPN) and MJD127 (PNP) are complementary devices.

Documents

Technical documentation and resources

No documents available