MJD122 Series

8.0 A, 100 V NPN Darlington Bipolar Power Transistor

Catalog

8.0 A, 100 V NPN Darlington Bipolar Power Transistor

Part	Frequency - Transition	Power - Max [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor MJD122-1G	4 MHz	1.75 W	DPAK	100 V	Surface Mount	10 µA	DPAK (2 Leads + Tab) SC-63 TO-252-3	150 °C	-65 °C	8 A	1000 hFE	4 V
ON Semiconductor MJD122RLG	4 MHz	1.75 W	DPAK	100 V	Surface Mount	10 µA	DPAK (2 Leads + Tab) SC-63 TO-252-3	150 °C	-65 °C	8 A	1000 hFE	4 V

Catalog

8.0 A, 100 V NPN Darlington Bipolar Power Transistor

Key Features

• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

• Straight Lead Version in Plastic Sleeves ("-1" Suffix)

• Lead Formed Version Available in 16 mm Tape and Reel ("T4" Suffix)

• Surface Mount Replacements for 2N6040-2N6045 Series, TIP120-TIP122 Series, and TIP125-TIP127 Series

• Monolithic Construction With Built-in Base-Emitter Shunt Resistors

• High DC Current Gain hFE= 2,500 (Typ) @ IC= 4.0 Adc

• Complementary Pairs Simplifies Designs

• NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

Description

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD122 (NPN) and MJD127 (PNP) are complementary devices.