NTH4L080N120SC1
ActiveSILICON CARBIDE (SIC) MOSFET - ELITESIC, 40 MOHM, 1200 V, M1, TO-247-4L SILICON CARBIDE (SIC) MOSFET… MORE
Deep-Dive with AI
Search across all available documentation for this part.
NTH4L080N120SC1
ActiveSILICON CARBIDE (SIC) MOSFET - ELITESIC, 40 MOHM, 1200 V, M1, TO-247-4L SILICON CARBIDE (SIC) MOSFET… MORE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NTH4L080N120SC1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 29 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1670 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) | 170 W |
| Rds On (Max) @ Id, Vgs | 110 mOhm |
| Supplier Device Package | TO-247-4L |
| Vgs (Max) [Max] | 25 V |
| Vgs (Max) [Min] | -15 V |
| Vgs(th) (Max) @ Id | 4.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 8.08 | |
| 30 | $ 6.45 | |||
| 120 | $ 5.98 | |||
| ON Semiconductor | N/A | 1 | $ 5.50 | |
Description
General part information
NTH4L080N120SC1 Series
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Documents
Technical documentation and resources