Discrete Semiconductor Products

SQ4282EY-T1_GE3

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MOSFET, DUAL N-CH, 30V, 8A, SOIC ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

MOSFET, DUAL N-CH, 30V, 8A, SOIC ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	SQ4282EY-T1_GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs [Max]	47 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2367 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	3.9 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	12.3 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Package / Case [y]	Package / Case [x]	Current - Continuous Drain (Id) @ 25°C	Grade	Configuration	Technology	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Qualification	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SQ4282EY-T1_BE3	8-SOIC	3.9 mm	0.154 in	8 A	Automotive	2 N-Channel (Dual)	MOSFET (Metal Oxide)	3.9 W	-55 °C	175 ░C	8-SOIC	AEC-Q101	30 V	47 nC	Surface Mount	2367 pF	2.5 V	12.3 mOhm
Vishay General Semiconductor - Diodes Division SQ4282EY-T1_GE3	8-SOIC	3.9 mm	0.154 in	8 A	Automotive	2 N-Channel (Dual)	MOSFET (Metal Oxide)	3.9 W	-55 °C	175 ░C	8-SOIC	AEC-Q101	30 V	47 nC	Surface Mount	2367 pF	2.5 V	12.3 mOhm

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General part information

Mosfet Array 30V 8A (Tc) 3.9W Surface Mount 8-SOIC

Technical documentation and resources