SQ4282 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET 2N-CH 30V 8A 8SOIC
| Part | Package / Case | Package / Case [y] | Package / Case [x] | Current - Continuous Drain (Id) @ 25°C | Grade | Configuration | Technology | Power - Max [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Qualification | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 8-SOIC | 3.9 mm | 0.154 in | 8 A | Automotive | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | 3.9 W | -55 °C | 175 ░C | 8-SOIC | AEC-Q101 | 30 V | 47 nC | Surface Mount | 2367 pF | 2.5 V | 12.3 mOhm |
 Vishay General Semiconductor - Diodes Division | 8-SOIC | 3.9 mm | 0.154 in | 8 A | Automotive | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | 3.9 W | -55 °C | 175 ░C | 8-SOIC | AEC-Q101 | 30 V | 47 nC | Surface Mount | 2367 pF | 2.5 V | 12.3 mOhm |