Discrete Semiconductor Products

SI4894BDY-T1-E3

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MOSFET N-CH 30V 8.9A 8SO

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Discrete Semiconductor Products

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MOSFET N-CH 30V 8.9A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4894BDY-T1-E3

Current - Continuous Drain (Id) @ 25°C	8.9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds	1580 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	1.4 W
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	FET Type	Vgs (Max)	Package / Case	Package / Case [y]	Package / Case [x]	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SI4894BDY-T1-E3	-55 °C	150 °C	8-SOIC	4.5 V 10 V	30 V	8.9 A	1580 pF	Surface Mount	N-Channel	20 V	8-SOIC	3.9 mm	0.154 in	38 nC	MOSFET (Metal Oxide)	3 V	11 mOhm	1.4 W
Vishay General Semiconductor - Diodes Division SI4894BDY-T1-GE3	-55 °C	150 °C	8-SOIC	4.5 V 10 V	30 V	8.9 A	1580 pF	Surface Mount	N-Channel	20 V	8-SOIC	3.9 mm	0.154 in	38 nC	MOSFET (Metal Oxide)	3 V	11 mOhm	1.4 W

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General part information

N-Channel 30 V 8.9A (Ta) 1.4W (Ta) Surface Mount 8-SOIC

Technical documentation and resources