SI4894 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 8.9A 8SO
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | FET Type | Vgs (Max) | Package / Case | Package / Case [y] | Package / Case [x] | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 8-SOIC | 4.5 V 10 V | 30 V | 8.9 A | 1580 pF | Surface Mount | N-Channel | 20 V | 8-SOIC | 3.9 mm | 0.154 in | 38 nC | MOSFET (Metal Oxide) | 3 V | 11 mOhm | 1.4 W |
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 8-SOIC | 4.5 V 10 V | 30 V | 8.9 A | 1580 pF | Surface Mount | N-Channel | 20 V | 8-SOIC | 3.9 mm | 0.154 in | 38 nC | MOSFET (Metal Oxide) | 3 V | 11 mOhm | 1.4 W |