VNS1NV04DPTR-E
ActivePOWER LOAD DISTRIBUTION SWITCH IC, LOW SIDE, 1 CHANNEL, 3.5 A, 250 MILLIOHMS, 8 PINS, SOIC
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VNS1NV04DPTR-E
ActivePOWER LOAD DISTRIBUTION SWITCH IC, LOW SIDE, 1 CHANNEL, 3.5 A, 250 MILLIOHMS, 8 PINS, SOIC
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Technical Specifications
Parameters and characteristics for this part
| Specification | VNS1NV04DPTR-E |
|---|---|
| Current - Output (Max) [Max] | 1.7 A |
| Fault Protection | Over Temperature, Current Limiting (Fixed), Over Voltage |
| Input Type | Non-Inverting |
| Interface | On/Off |
| Mounting Type | Surface Mount |
| Number of Outputs | 2 |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Output Configuration | Low Side |
| Output Type | N-Channel |
| Package / Case | 0.154 in |
| Package / Case | 8-SOIC |
| Package / Case | 3.9 mm |
| Ratio - Input:Output | 1:1 |
| Rds On (Typ) [Max] | 250 mOhm |
| Supplier Device Package | 8-SOIC |
| Switch Type | General Purpose |
| Voltage - Load [Max] | 36 V |
| Voltage - Supply (Vcc/Vdd) | Not Required |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
VNS1NV04DP-E Series
The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protects the chip in harsh environments.
Fault feedback can be detected by monitoring the voltage at the input pin.
Documents
Technical documentation and resources