Discrete Semiconductor Products

VS-1N1200RA

Active

DIODE GEN PURP 100V 12A DO203AA

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE GEN PURP 100V 12A DO203AA

Technical Specifications

Parameters and characteristics for this part

Specification	VS-1N1200RA

Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	2.5 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	200 C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AA, Stud, DO-4
Speed [Min]	200 mA, 500 ns
Supplier Device Package	DO-4
Supplier Device Package	DO-203AA
Technology	Reverse Polarity, Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.35 V

Part	Speed [Min]	Supplier Device Package	Supplier Device Package	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Package / Case	Mounting Type
Vishay General Semiconductor - Diodes Division VS-1N1200A	200 mA 500 ns	DO-4	DO-203AA	12 A	200 C	-65 C	2.5 mA	1.35 V	100 V	Standard	DO-203AA DO-4 Stud	Chassis Stud Mount
Vishay General Semiconductor - Diodes Division VS-1N1200RA	200 mA 500 ns	DO-4	DO-203AA	12 A	200 C	-65 C	2.5 mA	1.35 V	100 V	Reverse Polarity Standard	DO-203AA DO-4 Stud	Chassis Stud Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode 100 V 12A Chassis, Stud Mount DO-203AA (DO-4)

Technical documentation and resources